Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots
Identifieur interne : 012294 ( Main/Repository ); précédent : 012293; suivant : 012295Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots
Auteurs : RBID : Pascal:00-0095558Descripteurs français
- Pascal (Inist)
- 7866F, 7361E, 7855C, 7320D, 7350G, 4265K, 7847, Etude expérimentale, Gallium arséniure, Indium composé, Semiconducteur III-V, Réponse dynamique, Point quantique semiconducteur, Photoluminescence, Durée vie radiative, Spectre résolution temporelle, Conversion fréquence optique, Mouillage, Transition non radiative, Temps relaxation porteur charge, Durée vie porteur charge, Recombinaison électron trou.
English descriptors
- KwdEn :
- Carrier lifetime, Carrier relaxation time, Dynamic response, Electron-hole recombination, Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Nonradiative transitions, Optical frequency conversion, Photoluminescence, Radiative lifetimes, Semiconductor quantum dots, Time resolved spectra, Wetting.
Abstract
The temperature-dependent dynamic response of 1.3-μm-InGaAs/GaAs quantum dots is investigated using time-resolved photoluminescence upconversion with subpicosecond temporal resolution for excitation in either the GaAs bulk region surrounding the dots or within the wetting layer. Relaxation to the quantum-dot ground state occurs on a time scale as short as 1 ps, while radiative lifetimes as short as 400 ps are measured. The influence of nonradiative recombination is observed only for temperatures above 250 K. At temperatures below 77 K, an increase in the relaxation time and lifetime is observed when carriers are injected into the bulk GaAs region versus excitation into the wetting layer, which suggests that diffusion in the bulk GaAs region influences both the relaxation rate and the recombination rate. © 2000 American Institute of Physics.
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Pascal:00-0095558Le document en format XML
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Boggess</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Iowa</region></placeName><wicri:cityArea>Optical Science and Technology Center, Department of Physics and Astronomy, University of Iowa, Iowa City</wicri:cityArea></affiliation></author><author><name sortKey="Deppe, D G" uniqKey="Deppe D">D. G. Deppe</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Huffaker, D L" uniqKey="Huffaker D">D. L. Huffaker</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Shchekin, O B" uniqKey="Shchekin O">O. B. Shchekin</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Cao, C" uniqKey="Cao C">C. Cao</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0095558</idno><date when="2000-03-06">2000-03-06</date><idno type="stanalyst">PASCAL 00-0095558 AIP</idno><idno type="RBID">Pascal:00-0095558</idno><idno type="wicri:Area/Main/Corpus">013A64</idno><idno type="wicri:Area/Main/Repository">012294</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier lifetime</term><term>Carrier relaxation time</term><term>Dynamic response</term><term>Electron-hole recombination</term><term>Experimental study</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Nonradiative transitions</term><term>Optical frequency conversion</term><term>Photoluminescence</term><term>Radiative lifetimes</term><term>Semiconductor quantum dots</term><term>Time resolved spectra</term><term>Wetting</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7866F</term><term>7361E</term><term>7855C</term><term>7320D</term><term>7350G</term><term>4265K</term><term>7847</term><term>Etude expérimentale</term><term>Gallium arséniure</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Réponse dynamique</term><term>Point quantique semiconducteur</term><term>Photoluminescence</term><term>Durée vie radiative</term><term>Spectre résolution temporelle</term><term>Conversion fréquence optique</term><term>Mouillage</term><term>Transition non radiative</term><term>Temps relaxation porteur charge</term><term>Durée vie porteur charge</term><term>Recombinaison électron trou</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The temperature-dependent dynamic response of 1.3-μm-InGaAs/GaAs quantum dots is investigated using time-resolved photoluminescence upconversion with subpicosecond temporal resolution for excitation in either the GaAs bulk region surrounding the dots or within the wetting layer. Relaxation to the quantum-dot ground state occurs on a time scale as short as 1 ps, while radiative lifetimes as short as 400 ps are measured. The influence of nonradiative recombination is observed only for temperatures above 250 K. At temperatures below 77 K, an increase in the relaxation time and lifetime is observed when carriers are injected into the bulk GaAs region versus excitation into the wetting layer, which suggests that diffusion in the bulk GaAs region influences both the relaxation rate and the recombination rate. © 2000 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>76</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Dynamic response of 1.3-μm-wavelength InGaAs/GaAs quantum dots</s1></fA08><fA11 i1="01" i2="1"><s1>ZHANG (L.)</s1></fA11><fA11 i1="02" i2="1"><s1>BOGGESS (Thomas F.)</s1></fA11><fA11 i1="03" i2="1"><s1>DEPPE (D. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>HUFFAKER (D. L.)</s1></fA11><fA11 i1="05" i2="1"><s1>SHCHEKIN (O. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>CAO (C.)</s1></fA11><fA14 i1="01"><s1>Optical Science and Technology Center, Department of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Texas 78712-1084</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>1222-1224</s1></fA20><fA21><s1>2000-03-06</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2000 American Institute of Physics. 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